High-Power 100W GaN Broadband Amplifier Module 3-5 GHz

Introduction

The GaN Broadband Amplifier Module covering 3000 to 5000 MHz brings 100 W of clean CW power into the S-to-C band transition. It uses a Class AB Gallium Nitride on Silicon Carbide architecture that balances gain flatness, efficiency, and thermal resilience in a footprint of just 168.5 x 82.8 x 26.5 mm. This module is a drop-in building block for wideband jammers, radar exciters, and test setups that refuse to sacrifice instantaneous bandwidth.

Why GaN-on-SiC Dominates 3–5 GHz

Next to LDMOS or GaAs, GaN-on-SiC delivers a higher breakdown field and nearly three times the thermal conductivity. In the GaN Broadband Amplifier Module, the active die is bonded directly to a copper sub‑carrier and supported by a patented heat‑spreading architecture. This pulls heat away from the junction fast enough to maintain 100 W CW at a 50°C case temperature without bulky external cooling. A deep dive into the physics is available at the Wolfspeed GaN on SiC technology overview (DoFollow).

2000 MHz Instantaneous Bandwidth with the GaN Broadband Amplifier Module

Band‑switching or mechanical tuning is unnecessary. The GaN Broadband Amplifier Module delivers a full 2000 MHz instantaneous bandwidth, letting you sweep, hop, or spread across the entire 3–5 GHz range in real time. Gain flatness holds within ±3 dB across that window, which dramatically reduces the equalization overhead in wideband stimulus‑response measurements. If your application also needs coverage below 3 GHz, explore our 1–3 GHz 100W GaN module (internal link).

Power and Gain Specs in Detail

With a 0 dBm drive, the GaN Broadband Amplifier Module provides 50±3 dB of power gain, yielding 100 W output from an input as low as -2±3 dBm. The input stage handles up to +5 dBm without damage, giving plenty of headroom in real-world chains. Input and output VSWR both stay ≤2:1, so cascade performance remains predictable. Efficiency is 32% typical under CW, rising toward the lower band edge. Harmonics sit ≥10 dBc, and spurious content is suppressed below -60 dBc. 

Built Rugged for Field Deployment

Weighing 0.75 kg, this GaN Broadband Amplifier Module is at home in airborne pods, naval consoles, and transportable cases. It operates from a 28–32 V DC supply and draws about 10 A at 100 W. The GaN-on-SiC device plus a stress‑relieved assembly ensures survival under vibration, shock, and wide temperature cycling—factors that make it trusted in electronic warfare and mobile test environments.

Key Applications

Engineers repeatedly select the GaN Broadband Amplifier Module for S‑ and C‑band jammers, where its instantaneous bandwidth handles fast‑switching noise waveforms without gaps. In radar and EW simulators, the 2000 MHz span supports complex chirps and frequency‑agile threats. It also serves as a general‑purpose driver for antenna pattern measurements and EMI immunity testing. SDR transmitter chains benefit from the same blend of wide bandwidth and manageable power consumption.