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100W GaN Jamming Module 700-1020MHz | GaN RF Power

Technology: GaN
Frequency Range: 900MHz
Connector Type: N Female
Output Power: 100W

100W GaN jamming module covers 700-1020MHz with 50dBm output, 28V supply, built-in noise source, 50-ohm I/O, 150x80x22mm, 800g.

Technical Specifications

ParameterSpecificationNotes
Frequency range700-1020 MHzInstantaneous wideband
Output power50±1 dBm (100 W)At 28 V supply
Supply voltage28 V (28-32 V)DC input
Current draw≤9.2 AAt 100 W output
Modulation sourceBuilt-in high-speed noise modulation sourceVCO, DDS, SDR customizable
Analog scan speed270 kHzCustomizable 100-500 kHz
Input / output impedance50 OhmN-female connectors
Protection LEDsPower switch, overvoltage, overtemperatureLED indicators
Operating temperature-20 to +65 °CNormal operation
Dimensions (L×W×H)150 x 80 x 22 mmCompact module
Weight800 gLightweight
Base materialCopper base with GaN-on-SiCPatented thermal treatment

Product Details

When a mission requires reliable broadband RF suppression, the 100W GaN jamming module delivers solid output across 700–1020 MHz. Built around GaN-on-SiC technology and an AB-class architecture, this compact RF power block targets integrators working on counter-UAS, tactical jamming, and spectrum control systems. The design prioritizes thermal stability, simple DC operation, and consistent performance across the full band. Because it is supplied as a complete module rather than a bare transistor, much of the RF and mechanical engineering is already handled.

100W GaN Jamming Module 700-1020MHz | GaN RF Power

Wideband GaN Power Stage

At the core of this 100W GaN jamming module is a gallium nitride device mounted on a copper carrier. The AB-class design provides instantaneous wideband coverage, meaning the module does not require band switching or complex tuning when moving across the 700–1020 MHz range. Both input and output ports are matched to 50 ohms, so the module can be inserted into standard RF chains with minimal additional matching. The output stage delivers 50±1 dBm, equal to 100 W, while drawing no more than 9.2 A from the 28 V supply. The supply can operate from 28 V to 32 V, giving some flexibility in battery-powered or vehicle-based systems.

Built-In Signal Source and Scan Flexibility

A practical feature of the 100W GaN jamming module is the integrated high-speed noise modulation source. This source reduces external signal generator requirements for many denial and jamming missions. For specialized waveforms, the module can be customized with VCO, DDS, or SDR-based sources. The default analog scan speed is 270 kHz, with a factory customization range of 100 kHz to 500 kHz. This means integrators can set the scanning behavior to match a specific threat profile or test protocol without redesigning the RF chain.

Mechanical and Thermal Design

High-power RF modules generate significant heat, so the 100W GaN jamming module uses GaN-on-SiC technology on a copper base. A patented thermal treatment spreads heat efficiently from the transistor to the mounting surface. The module measures 150 x 80 x 22 mm and weighs 800 g, making it suitable for rack-mounted, vehicle, or portable installations. N-female connectors handle RF input and output. LED indicators show power switch status, overvoltage, and overtemperature conditions. Normal operating temperature spans -20°C to +65°C, allowing use in harsh outdoor environments when adequate cooling is provided.

Electrical Interface and Protection

This 100W GaN jamming module keeps the RF interface simple with 50-ohm input and output ports on N-female connectors. On the DC side, the module expects a 28 V supply within a 28–32 V window. Current consumption remains at or below 9.2 A at full 100 W output. Built-in monitoring covers overvoltage and overtemperature events, and the front-panel LEDs give a quick visual check of power, overvoltage, and overtemperature states. The compact 150 x 80 x 22 mm footprint and 800 g weight make the module easy to mount in dense racks or portable cases.

Customization Options

The standard 100W GaN jamming module ships with a high-speed noise modulation source and a 270 kHz analog scan speed. Factory customization is available for scan speeds from 100 kHz to 500 kHz. The modulation source can also be specified as VCO, DDS, or SDR to support different jamming waveforms or testing scenarios. Because the core GaN-on-SiC RF path stays unchanged, custom versions keep the same mechanical outline and 50-ohm impedance. This makes the module suitable for long production runs and specialized one-off builds alike.

Applications

Typical uses include counter-UAS defense, EMC testing, tactical communication denial, and security screening. In each case, the module provides wide instantaneous bandwidth and high output power without large external amplifier racks. For teams that need custom scan speeds or modulation sources, factory options are available without changing the core mechanical design. The 100W GaN jamming module is also used in laboratory spectrum control setups where repeatable wideband output is required.

Frequently Asked Questions

Q: What frequency band does the 100W GaN jamming module cover?
A: It covers 700–1020 MHz as an instantaneous wideband module, with no band switching required.
Q: What output power can it produce?
A: The module delivers 50±1 dBm, or 100 W, while drawing no more than 9.2 A from a 28–32 V DC supply.
Q: Can the modulation source and scan speed be customized?
A: Yes. It includes a high-speed noise source by default, with VCO, DDS, or SDR options. The 270 kHz analog scan speed can be customized from 100 kHz to 500 kHz.
Q: What protection and thermal features are included?
A: It has LEDs for power, overvoltage, and overtemperature. GaN-on-SiC on a copper base with patented thermal treatment supports operation from -20°C to +65°C.

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